Dynamics of impurity and valence bands in Ga1−xMnxAs within the dynamical mean-field approximation

نویسندگان

  • M. A. Majidi
  • J. Moreno
  • M. Jarrell
  • R. S. Fishman
  • K. Aryanpour
چکیده

M. A. Majidi,1 J. Moreno,1,2 M. Jarrell,1 R. S. Fishman,3 and K. Aryanpour1,4 1Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221, USA 2Department of Physics, University of North Dakota, Grand Forks, North Dakota 58202, USA 3Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA 4Department of Physics, University of California, Davis, California 95616, USA Received 31 October 2005; published 21 September 2006

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ellipsometric study of the electronic structure of Ga1−xMnxAs and low-temperature GaAs

We have measured the optical constants of Ga1−xMnxAs from 0.62 to 6 eV, using spectroscopic ellipsometry. The second derivatives of the dielectric function are examined through a critical point analysis, allowing us to inspect interband transitions from different points in kW space. The evolution of the band structure over a broad doping range is determined. Specifically, the E1 critical point ...

متن کامل

Multiband tight-binding model of local magnetism in Ga1-xMnxAs.

We present the spin and orbitally resolved local density of states (LDOS) for a single Mn impurity and for two nearby Mn impurities in GaAs. The GaAs host is described by a sp(3) tight-binding Hamiltonian, and the Mn impurity is described by a local p-d hybridization and on-site potential. Local spin-polarized resonances within the valence bands significantly enhance the LDOS near the band edge...

متن کامل

Weak localization in Ga1-xMnxAs: Evidence of impurity band transport

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor Ga1−xMnxAs, x=0.05–0.08, at low temperatures T 3 K and low magnetic fields 0 B 20 mT . We attribute this effect to weak localization. Observation of weak localization strongly suggests impurity band transport in these materials, since for valence band transport one expects either weak antilocalization due...

متن کامل

Spin dynamics in the diluted ferromagnetic Kondo lattice model

The interplay of disorder and competing interactions is investigated in the carrier-induced ferromagnetic state of the Kondo lattice model within a numerical finite-size study in which disorder is treated exactly. Competition between impurity spin couplings, stability of the ferromagnetic state, and magnetic transition temperature are quantitatively investigated in terms of magnon properties fo...

متن کامل

Mechanism of carrier-induced ferromagnetism in magnetic semiconductors

Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga1−xMnxAs by using the coherent potential approximation (CPA). The result reveals that a p-hole in the band tail of Ga1−xMnxAs is not like a free carrier but is rather virtually bounded to impurity sites. The carrier spin stron...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006